75A1200V 两单元IGBT模块
Features:
●MOS input (voltage controlled)
●N channel, homogeneous Si
●Low inductance case
●Very low tail current with low temperature dependence
●High short circuit capability, self limiting to 6×Icnom
●Latch-up free
●Fast & Soft inverse CAL diodes
●Isolated copper baseplate using DCB Direct Copper Bonding Technology
●Large clearance(10mm) and creepage distances (20mm) |
